International Conference on Free Electrons Laser Applications in Infrared and THz Studies of New States of Matter

Nonlinear response of semiconductor systems under intense THz excitation

5 Jul 2022, 17:35

20m

Róża (Novotel Warszawa Centrum)

Oral presentation Tue 05/07 Afternoon 2/ Abstract ID:

Speaker

Oleksiy Pashkin (Helmholtz-Zentrum Dresden-Rossendorf)

Description

Intense narrowband terahertz pulses from the FELBE free-electron laser facility and a complementary table-top high-field THz source are utilized to study nonlinear excitation regimes of various degrees of freedom in semiconductors. In this talk we present several recent examples including impurity transitions in boron doped Si [1], intersubband transitions in Ge/SiGe quantum wells [2] and plasmons in InGaAs nanowires [3,4].

[1] F. Meng et al., Phys. Rev. B 102, 075205 (2020).
[2] C. Ciano et al., Optics Express 28, 7245 (2020).
[3] D. Lang et al., Nanotechnology 30, 084003 (2019).
[4] R. Rana et al., Nano Lett. 20, 3225 (2020).