Nonlinear response of semiconductor systems under intense THz excitation

5 Jul 2022, 17:35
Róża (Novotel Warszawa Centrum)


Novotel Warszawa Centrum

Marszałkowska 94/98 00-510 Warsaw POLAND Phone: +48 22 5960000 Fax: +48 22 5960647 E-Mail: WWW:


Oleksiy Pashkin (Helmholtz-Zentrum Dresden-Rossendorf)


Intense narrowband terahertz pulses from the FELBE free-electron laser facility and a complementary table-top high-field THz source are utilized to study nonlinear excitation regimes of various degrees of freedom in semiconductors. In this talk we present several recent examples including impurity transitions in boron doped Si [1], intersubband transitions in Ge/SiGe quantum wells [2] and plasmons in InGaAs nanowires [3,4].

[1] F. Meng et al., Phys. Rev. B 102, 075205 (2020).
[2] C. Ciano et al., Optics Express 28, 7245 (2020).
[3] D. Lang et al., Nanotechnology 30, 084003 (2019).
[4] R. Rana et al., Nano Lett. 20, 3225 (2020).

Primary author

Oleksiy Pashkin (Helmholtz-Zentrum Dresden-Rossendorf)

Presentation Materials

There are no materials yet.
Your browser is out of date!

Update your browser to view this website correctly. Update my browser now