Speaker
Joanna Matulewicz
(NCBJ)
Description
Gallium oxide is an emerging ultra-wide bandgap semiconductor with potential applications in optoelectronics, power electronics, and in devices operating in harsh environments. One of the many advantages of gallium oxide is its resistance to radiation, understood as the ability to maintain the crystalline structure. Furthermore, doping gallium oxide with rare earth ions can expand its applications to include efficient light emitters. In this talk, I will present how the radiation resistance can be investigated through rare earth ion implantation, and what is its impact on the crystal structure of gallium oxide.
