Speaker
Description
Nowadays, material research is driven by new technologies that aim to improve existing materials or replace them with more efficient and cost-effective alternatives. Compound semiconductors have become essential in this context, particularly for optoelectronic applications such as lasers, displays, or white LEDs, where silicon cannot be used due to its indirect and relatively narrow bandgap.
β-Ga2O3 is an emerging ultra-wide-bandgap semiconductor with strong resistance to radiation and high temperatures, making it suitable for use in harsh environments. Doping β-Ga2O3 with rare earth ions can modify its optical properties, expanding its range of potential applications.
In this talk, I will present research on the effects of ion implantation – a method of doping – on the crystal structure of β-Ga2O3, as well as its structural recovery after thermal annealing.
