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SUMMARY:CMOS-based THz detector with on-chip amplifier for imaging applica
 tions
DTSTART;VALUE=DATE-TIME:20220708T093000Z
DTEND;VALUE=DATE-TIME:20220708T095000Z
DTSTAMP;VALUE=DATE-TIME:20260618T043233Z
UID:indico-contribution-799@events.ncbj.gov.pl
DESCRIPTION:Speakers: Cezary Kołaciński (CENTERA Laboratory\, Institute 
 of High Pressure Physics PAS\, 01-142 Warsaw\, Poland)\nThe non-ionizing n
 ature of terahertz radiation together with the ability to penetrate throug
 h common packaging materials have sparked significant interest in THz non-
 destructive imaging applications. There is a huge need for low-cost and co
 mpact THz systems\, which will grow with the further discovery of potentia
 l THz wave applications. A natural solution to this issue is the usage of 
 mainstream semiconductor technologies\, such as complementary metal-oxide-
 semiconductor (CMOS) lines. The understanding of device properties and the
  performance of CMOS-based detectors are constantly improving\, resulting 
 in high sensitivity\, low noise\, and broadband devices. \n\nMentioned det
 ector improvement stimulates the research aimed at the readout circuits ad
 dressed to these devices. The integration between CMOS-based detector and 
 on-chip readout electronics seems to be a natural solution. This attitude 
 is optimal from the system performance point of view: the path between det
 ector output and readout input is minimized. This opens up the way for the
  possibilities in the field of THz systems development and miniaturization
 . \n\nIn this study\, we concentrate on a lower range of THz frequencies -
  the vicinity of 300 GHz. Two different types of integrated antennas have 
 been implemented: a patch-type antenna for the front-side radiation coupli
 ng and a slot dipole antenna for the coupling with the substrate or booste
 r lens. Furthermore\, we extend our research toward the on-chip integrated
  amplifier. These solutions are not mutually exclusive and can be combined
  to achieve the best performance.\nAlthough the best practical performance
  is achieved with substrate lens coupled devices\, patch antenna coupling 
 brings the advantage of a strong reduction in packaging complexity. The di
 sadvantage of patch-antenna coupled detectors is the relatively small effe
 ctive area of the antenna\, which limits its total efficiency compared to 
 a backside-illumination solution with the slot antenna. This shortcoming c
 an be improved by an additional dielectric lens attached to the top of the
  patch. \n\nThe output signal amplifies can be realized by using an integr
 ated amplifier implemented on the same chip. Noise-optimized design and mi
 nimized distance between the detector output and amplifier input results i
 n cost-efficient devices without the deterioration in the SNR (signal-to-n
 oise ratio). This work uses an integrated circuit based on a differential 
 pair loaded by two resistors to achieve a voltage gain of 20V/V (26dB).\n\
 nDescribed above solutions enable to increase of the output signal (and th
 e practical SNR) by a total factor of approx. ~160 (at 275 GHz of radiatio
 n frequency for patch antenna detector)\, where the factor x8 is related t
 o the increased effective area as well as improved efficiency of the anten
 na and the factor of  x20 - due to the amplifier circuit.\n\nhttps://event
 s.ncbj.gov.pl/event/75/contributions/799/
LOCATION:Novotel Warszawa Centrum Róża
URL:https://events.ncbj.gov.pl/event/75/contributions/799/
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